The construction difference between the two is shown in the fig given below.Īs we can see the D-MOSFET have physical channel between the source and The primary difference between them is their physical construction.
(1) Depletion type (2) Enhancement type MOSFET.ĭ-MOSFETS can be operated in both the depletion mode and the enhancement mode. E MOSFETS are restricted to operate in enhancement mode. (a) Depletion type MOSFET (b) Enhancement type MOSFET The circuit symbols used by several manufacturers are indicated in the Fig below. Most MOSFETS however are triodes, with the substrate internally connected to the source. Used in high voltage / current & high frequency switching power applications (Inverters, SMPS).We now turn our attention to the insulated gate FET or metal oxide semi-conductor FET which is of greater commercial importance than the junction FET.Used in high speed power converters like inverters & choppers.PT normally operated as a switch in CE config.
Used in heat / light control, ac motor control circuit. Įxample of Inverter Grade Thyristor Ratings Ex: Converter grade (line commutated) SCR. Line Commutated Thyristors available up to 6000V, 4500A. Madhusudhan Rao, E&C Dept., MSRITĬomparison between different commonly used Thyristors Power Semiconductor Devices, their Symbols & Characteristics 14ĭEVICE SYMBOLS & CHARACTERISTICS 15 Prof. GATT = Gate Assisted Turn Off Thyristor. N-Channel MOSFET = N-Channel Metal Oxide Silicon Field Effect Transistor. IGBT = Insulated Gate Bipolar Junction Transistor. NPN BJT = NPN Bipolar Junction Transistor. IGCT = Insulated Gate Controlled Thyristor. 
( Switching speed lower than MOSFET) 10 Prof.
Higher current capability & higher switching speed than a BJT. Low on state conduction power loss like BJT. Simple gate drive, Lower switching loss. Combines the advantages of BJT & MOSFET. Semiconductor Cross-section of IGBT 8 Prof. Gate pulse width critical for turn-off for larger currents. Gate pulse width not critical for smaller device currents. Gate controlled possible if current is less than peak controllable current. High switching speeds achieved due to fast turn-on & turn-off. Low on-state losses & large current capabilities. One MOSFET for turning ON the MCT and the other to turn OFF the MCT. Basically a thyristor with two MOSFETs built in the gate structure. New device that has become commercially available. Jawale Head and Associate Professor Department of Electronics Yeshwantrao Chavan Mahavidyalaya, Tuljapur B.Sc.-I Sem-I Paper-I 1
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